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Please use this identifier to cite or link to this item:
http://hdl.handle.net/10761/937
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| Issue Date: | 2-Feb-2012 |
| Authors: | Scapellato, Giorgia Graziella |
| Title: | B and Sb in germanium for micro and optoelectronics |
| Abstract: | This thesis is focused on the study and optimization of Ge as a mterial alternative to Si for new generation, more performing micro and optoelectronic devices. In particular the B and Sb doping in Ge have been investigated. |
| Appears in Collections: | Area 02 - Scienze fisiche
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Files in This Item:
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Description |
Size | Format | Visibility |
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| SCPGGG84D63C351X-ScapellatoGiorgiaG_tesi di dottorato.pdf | Scapellato_tesi | 7,32 MB | Adobe PDF | View/Open
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